Silica-Shielded Ga-ZnS Metal-Semiconductor Nanowire Heterojunctions

Fabrication of metal-semiconductor nanowire heterojunctions.

Understanding the Electronic Structure of Metal/SAM/Organic−Semiconductor Heterojunctions

Computational modeling is used to describe the mechanisms governing energy level alignment between an organic semiconductor (OSC) and a metal covered by various self-assembled monolayers (SAMs). In particular, we address the question to what extent and under what circumstances SAM-induced work-function modifications lead to an actual change of the barriers for electron and hole injection from t...

Si nanowire metal-insulator-semiconductor photodetectors as efficient light harvesters.

Novel ITO-Si nanowire (NW) metal-insulator-semiconductor (MIS) photodetectors were fabricated by using n-type Si NWs as detection units and ITO films as top gate electrodes. Measurements on the Si NW based device reveal a significant photoresponse, including photocurrent generation with an external quantum efficiency (EQE) of approximately 35% at a peak wavelength of 600 nm at zero external bia...

Size reduction of a semiconductor nanowire laser using metal coating

We explore the possibility of coating semiconductor nanowires with metal (Ag) to reduce the size of nanowire lasers operating at photon energies around 0.8–2 eV. Our results show that the material gain of a typical III-V semiconductor in nanowire may be sufficient to compensate Joule losses of such metal as Ag. The most promising mode to achieve lasing seem to be TM01 near its cutoff. To calcul...

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arse...